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Semiconductor Interfaces at the Sub-Nanometer Scale
Englisch
630 b
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This book comprises review papers by leading scientists in the fields of semiconductor growth, analysis and device structures. In particular, it contains reviews of the state-of-the-art in the following topics: (a) theoretical and experimental treatment of epitaxial growth; (b) electronic bandstructure on the atomic to nanometer scale in semiconductor interfaces; (c) analysis of semiconductor interfaces and superlattices by photo electrospectroscopy, HRTEM and STM; (d) discussion of relevant properties and criteria in Group IV and III--V devices. All the reviews place an emphasis on the relevant properties on the atomic to nanometer scale as this is extremely important for superlattice structures and devices. For those working in semiconductor superlattices, MBE and ultra-thin-layer (quantum) phenomena: the book provides a state of the art review and extensive reference to recent work.
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